In this project, an RF model of the indirectly heated four-terminal PCM RF switch will be developed and verified against experimental data. This model will be useful to accurately predict the behavior of these devices and to simulate large circuits with small computational power.
Project description:
Recently, RF switches based on phase-change materials (PCM) have emerged as promising candidates for high-performance RF switches due to their superb transmission properties, small footprint, low switching time and energy, scalability, CMOS compatibility, and non-volatility. We are currently developing the fabrication process of these devices here, at the Technion facilities.
In this project, an RF model of the indirectly heated four-terminal PCM RF switch will be developed and verified against experimental data. This model will be useful to accurately predict the behavior of these devices and to simulate large circuits with small computational power.
Schedule:
• Study the working principles of the PCM RF switch and RF modeling theory.
• Development of the RF model for the PCM RF switch using experimental measurements and fine-element simulations (in ADS or HFSS).
• Development of the model in ADS/Matlab.
• Verification against experimental measurements.
Prerequisites: Linear Circuits (required), RF CMOS Integrated Circuits (recommended)
Supervisor: Nicolas Wainstein, nicolasw@campus.technion.ac.il