Optical G-MOS Gas Sensor in CMOS-SOI-MEMS Technology

In this project, you will implement optical G-MOS detectors based on CMOS-SOI-MEMS technology. You will be responsible for the device coupled electrical/thermal and mechanical behavior requirements, analysis and specifications definition.

Integrating low power gas sensors in personal mobile devices may prove very useful in the future. This will allow geographically precise monitoring of air pollution and alerting the user about presence of hazardous materials.
The present project studies the optical G-MOS – gas sensor implemented in commercial CMOS-SOI technology. The micro-machined gas sensor includes a dissipative heating element formed on the suspended buried oxide of the CMOS-SOI process – a large NMOS transistor operated at high currents in saturation. When heated by 50K – 150K, the reaction layer on top of the heating element starts chemical reaction with the relevant gas, and this reaction releases additional heat power. A very sensitive vacuum packaged thermal sensor, the TMOS, is used to sense this additional heat change and alert the user about the presence of the gas.

In this project, you will implement optical G-MOS detectors based on CMOS-SOI-MEMS technology. You will be responsible for the device coupled electrical/thermal and mechanical behavior requirements, analysis and specifications definition. ANSYS, a powerful yet very user-friendly 3D-simulation tool will be used to assess the performance, and the layout will be designed using Cadence Virtuoso.

Recommended courses: MEMS 046968, Detectors 046773

For more information, please contact Goel Samuel Room 711 Mayer Building, tel 4668, goel@ee.technion.ac.il

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