In this project, the RF model of the indirectly heated four-terminal PCM RF switch will be improved and verified against experimental data. The model will be unified with an electro-thermal model of the device to perform optimizations of the device structure for different applications. This model will be used to explore the design constraints of these devices and to find the optimum device geometries for different applications.
Project description:
Recently, RF switches based on phase-change materials (PCM) have emerged as promising candidates for high-performance RF switches due to their superb transmission properties, small footprint, low switching time and energy, scalability, CMOS compatibility, and non-volatility. We are currently developing the fabrication process of these devices here, at the Technion facilities.
In this project, the RF model of the indirectly heated four-terminal PCM RF switch will be improved and verified against experimental data. The model will be unified with an electro-thermal model of the device to perform optimizations of the device structure for different applications. This model will be used to explore the design constraints of these devices and to find the optimum device geometries for different applications.
Schedule:
• Study the working principles of the PCM RF switch and RF modeling theory.
• Improvement of the RF model for the PCM RF switch using experimental measurements and/or finite-element method (FEM) simulations (in ADS or HFSS).
• Implementation of the RF model in Verilog-A/Matlab & unification of the RF model with the electro-thermal model.
• Design exploration for optimum performance.
Prerequisites: Introduction to Semiconductors, Linear Circuits
Supervisor: Nicolas Wainstein, nicolasw@campus.technion.ac.il